Home
Contact us
Home-> DRAM -> EM42AM1684RBA 　
　

DRAM products

EOREX™ DRAM products includes

Mobile SDRAM

MOBILE DDR SDRAM

SDRAM

DDR SDRAM

DDR-II SDRAM

EOL

 

 

 

 



 

Click to download datasheet regarding. Please note that the content of datasheet is subject to change without notice.

 　
 

The EM42AM1684RBA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 268,435,456 bits which organized as 4Meg words x 4 banks by 16 bits.

The 256Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation.

The data path internally prefetches multiple bits and

It transfers the data for both rising and falling edges of the system clock. It means the doubled data bandwidth can be achieved at the I/O pins.

Available packages: FBGA-60B(13mmx8mm).


 
Feature

Internal Double-Date-Rate architecture with 2 Accesses per clock cycle.

Single 2.5V+/-0.2V power supply.
2.5V SSTL-2 compatible I/O
  Burst length of 2,4,8
  2,2.5,3 clock read latency
  Bi-directional, intermittent data  strobe (DQS)
All inputs except data and DM are sampled at the positive edge of the system clock
Data Mask (DM) for write data
Sequential & Interleaved Burst type available
Auto precharge option for each burst accesses
DQS edge-aligned with data for read cycles
DQS center-aligned with data for write cycles
DLL aligns DQ & DQS transitions with CLK transition
Auto refresh and self refresh
8,192 refresh cycles / 64ms
DataSheet
Timing
 
　
DRAM | Power| MCU | Support | Corporate
© Copyright 2008 Eorex Corporation. Terms and conditions