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Click to download datasheet regarding. Please note that the content of datasheet is subject to change without notice.

 　
 

The EM42AM1684RTB is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 268,435,456 bits which organized as 4Meg words x 4 banks by 16 bits. The 256Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the data for both rising and falling edges of the system clock. It means the doubled data bandwidth can be achieved at the I/O pins. Available packages : TSOPII 66P 400mil.
 
Feature
Internal Double-data-rate architecture with 2 accesses per clock cycle

VDD=VDDQ= 2.5V ±0.2V (DDR-333)
 

VDD=VDDQ= 2.6V ±0.1V (DDR-400)
2.5V SSTL-2 compatible I/O
 

Burst Length (B/L) of 2, 4, 8
  2,2.5,3 clock read latency
  Bi-directional, intermittent data  strobe (DQS)
All inputs except data and DM are sampled at the positive edge of the system clock
Data Mask (DM) for write data
Sequential & Interleaved Burst type available
Auto precharge option for each burst accesses
DQS edge-aligned with data for read cycles
DQS center-aligned with data for write cycles
DLL aligns DQ & DQS transitions with CLK transition
Auto refresh and self refresh
8,192 refresh cycles / 64ms
DataSheet
Timing
 
　
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