Eorex Corporation - DRAM manufacturer

Home

Contact us

Home-> DRAM -> EM42BM1684LBA

DRAM products

EOREX™ DRAM products includes

Click to download datasheet regarding. Please note that the content of datasheet is subject to change without notice.

The EM42BM1684LBA is a high speed synchronous RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8 meg words x 4 Banks x16 bits.. The 512 Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path intemally prefetches multiple bits and it transfers the data for both rising and falling edges of the system clock. It means the doubled data bandwidth can be achieved at I/O pins.
Available packages:FBGA-60B(12mmx10mm)

Feature
		Internal Double-data-rate architecture with 2 accesses per clock cycle
		1.8V+/-0.1V VDD/VDDQ
		1.8V LV-COMS compatible I/O.
		Burst length of 2,4,8,16
		Data Mask (DM) for write data
		3 clock read latency(CL3)
		All inputs except data and DM are sampled at the positive edge of the system clock
		Bi-directional,intermittent data strobe(DQS)
		Data Mask (DM) for write data
		Sequential & Interleaved Burst type available
		Auto Precharge option for each burst-accesses
		DQS edge-aligned with data for read cycles
		Sequential & Interleaved Burst type available
		DQS center-aligned with data for write cycles
		No DLL;CK to DQS is not synchronized
		Deep power down mode.
		Partial Array Self-Refresh(PASR)
		Auto Temperature Compensated Self-Refresh(TCSR)by built-in temperature sensor
		8,192 refresh cycles/64ms

DataSheet
Timing

DRAM | Power| MCU | Support | Corporate