The EM44DM0888LBA is a high speed Double Date Rate 2 (DDR2) Synchronous DRAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 16Mbits x 8 banks by 8 bits. This synchronous device achieves high speed double-data-rate transfer rates of up to 800 Mb/sec/pin (DDR2-800) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) Off-Chip Driver (OCD) impedance adjustment and On Die Termination (4) normal and weak strength data output driver. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in a /RAS and /CAS multiplexing style. The 1Gb DDR2 devices operates with a single power supply: 1.8V ± 0.1V VDD and VDDQ. Available package: TFBGA-60Ball (with 0.8mm x 0.8mm ball pitch)