| Feature |
|
 |
Fully synchronous to positive clock edge |
|
 |
Single1.8V+/-0.1V power supply |
|
 |
LVCMOS compatible with multiplexed address |
|
 |
Programmable Burst Length (B/L) - 1,2,4,8
or full page |
|
 |
Programmable CAS Latency (C/L) - 1,2,3 |
|
 |
Data Mask (DQM) for Read / Write masking |
|
 |
| Programmable wrap sequence |
- Sequential (B/L = 1/2/4/8/full page
) |
| |
- Interleave (B/L = 1/2/4/8 ) |
|
|
 |
Burst read with single-bit write operation |
|
 |
Deep power down mode. |
|
 |
Auto refresh and self refresh |
| |
 |
Special function support. |
| |
|
|
-PASR(Partial Array Self Refresh) |
| |
|
|
-Auto TCSR(Temperature Compensated Self
Refresh) |
| |
 |
Programmable drvier strength
control |
| |
|
|
-Full strength or 1/2, 1/4 of full
strength |
|
 |
4,096 refresh cycles / 64ms(15.625us) |