Home-> DRAM -> EM488M3244VBD  
 

DRAM products

EOREX™ DRAM products includes

Mobile SDRAM

MOBILE DDR SDRAM

SDRAM

DDR SDRAM

DDR-II SDRAM

EOL

PCN
 
  The EM488M3244VBD is Synchronous Dynamic Random Access Memory ( SDRAM ) organized as 2Meg words x 4 banks x 32 bits. All inputs and outputs are synchronized with the positive edge of the clock . The 256Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is designed to operate in 3.3V low power memory system. It also provides auto refresh with power saving / down mode. All inputs and outputs voltage levels are compatible with LVCMOS. Available packages:BGA-90B(13mmx8mm)
 
  Feature
Fully synchronous to positive clock edge
Single 2.7V~3.6V  power supply
LVCMOS compatible with multiplexed address
Programmable Burst Length (B/L) - 1,2,4,8 or full page
Programmable CAS Latency (C/L) - 2 or 3
Data Mask (DQM) for Read / Write masking
Programmable wrap sequence - Sequential (B/L = 1/2/4/8/full page )
  - Interleave (B/L = 1/2/4/8 )
Burst read with single-bit write operation
Deep power down mode.
Auto refresh and self refresh.
Special function support. -PASR(Partial Array Self Refresh)
      -Auto TCSR(Temperature Compensated Self Refresh)
Programmable drive strength control  
                                               -Full strength or 1/2,1/4 of full strength
4,096 refresh cycles / 64ms(15.625us)
   
   
DataSheet
Timing
 
 
© Copyright 2008 Eorex Corporation. Terms and conditions