| Feature |
|
 |
Fully synchronous to positive clock edge |
|
 |
VDO/VDDQ= 1.8V +/- 0.15V power supply |
|
 |
LVCMOS compatible with multiplexed address |
|
 |
Programmable Burst Length (B/L) - 1,2,4,8
or full page |
|
 |
Programmable CAS Latency (C/L) - 2,3 |
|
 |
Data Mask (DQM) for Read / Write masking |
|
 |
| Programmable wrap sequence |
- Sequential (B/L = 1/2/4/8/full page
) |
| |
- Interleave (B/L = 1/2/4/8 ) |
|
|
 |
Burst read with single-bit write operation |
|
 |
All inputs are sampled at the rising edge
of the system clock |
| |
 |
Auto refresh and self refresh |
|
 |
8,192 refresh cycles / 64ms(7.8us) |